Fr. 106.00

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Anglais · Livre de poche

Expédition généralement dans un délai de 3 à 5 semaines

Description

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The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.


Table des matières










1. An Introduction to Nanoscale CMOS Technology Transistor. 2. High Performance Tunnel Field Effect Transistor (TFET) for Future Low Power Applications. 3. Ultra Low Power III-V Tunnel Field Effect Transistors. 4. Performance Analysis of Carbon Nanotube and Graphene Tunnel Field Effect Transistors. 5. Characterization of Silicon FinFETs Under Nanoscale Dimension. 6. Germenium or SiGe FinFETs for Enhanced Performance in Low Power Applications. 7. Switching Performance Analysis of III-V FinFET. 8. Negative Capacitance Field Effect Transistors to Address the Fundamental Limitations in Technology Scaling. 9. Recent Trends in Compact Modeling of Negative Capacitance Field Effect Transistors. 10. Fundamentals of 2D Materials. 11. Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field Effect Transistor (FET) Devices for Low Power Applications.

A propos de l'auteur










D. Nirmal is presently working as an Associate Professor and Head in the Department of Electronics and Communication engineering. His research interests includes Nanoelectronics, 1D/2D Materials, Carbon nanotubes, GaN Technology, Device and Circuit Simulation - GSL, Sensors, Nanoscale device design and modelling.
J. Ajayan is an Associate Professor in the Department of Electronics and Communication Engineering at SR University, Telangana, India. His areas of interest are microelectronics, semiconductor devices, nanotechnology, RF integrated circuits and photovoltaics.
Patrick Fay is currently a Professor with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA. He established the High Speed Circuits and Devices Laboratory, Notre Dame, and oversaw the design, construction, and commissioning of the 9000-ft2 class 100 cleanroom housed in Stinson-Remick Hall at Notre Dame. He has served as the Director of this facility since 2003.


Résumé

The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.

Détails du produit

Collaboration J. Ajayan (Editeur), Patrick J. Fay (Editeur), D. Nirmal (Editeur)
Edition Taylor and Francis
 
Langues Anglais
Format d'édition Livre de poche
Sortie 04.10.2024
 
EAN 9781032061627
ISBN 978-1-032-06162-7
Pages 290
Poids 439 g
Illustrations schwarz-weiss Illustrationen, Raster,schwarz-weiss, Zeichnungen, schwarz-weiss, Tabellen, schwarz-weiss
Catégories Sciences naturelles, médecine, informatique, technique > Physique, astronomie > Physique atomique et nucléaire

TECHNOLOGY & ENGINEERING / Nanotechnology & MEMS, TECHNOLOGY & ENGINEERING / Electronics / Circuits / General, TECHNOLOGY & ENGINEERING / Electrical, TECHNOLOGY & ENGINEERING / Electronics / Microelectronics, Electronics: circuits and components, Electronic devices and materials, Circuits & components, Semi-conductors & super-conductors

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