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Informationen zum Autor WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE. Klappentext HBT-Transistoren, die sich durch Schnelligkeit und geringen Stromverbrauch auszeichnen, sind herkömmlichen bipolaren Silicium-Transistoren weit überlegen. Sie eignen sich ideal für drahtlose Kommunikation und Mobiltelephonie und werden daher gegenwärtig intensiv erforscht. Diese Einführung ist so verständlich formuliert, daß der Leser keinerlei Vorkenntnisse der Bauelementephysik benötigt. Geboten wird auch neues Material zu Feldeffekttransistoren. (04/99) Zusammenfassung An introductory guide to heterojunction bipolar and field effect transistors, this handbook addresses the industry's growing need for faster, low-powered devices for use in cellular and wireless communications. These devices replace silicon bipolar transistors, promising superior performance in less time. Inhaltsverzeichnis Basic Properties and Device Physics of III-V Materials. Two-Terminal Heterojunction Devices. HBT D.C. Characteristics. HBT High-Frequency Properties. FET D.C. Characteristics. FET High-Frequency Properties. Transistor Fabrication and Device Comparison. Appendices. Index.
Table des matières
Basic Properties and Device Physics of III-V Materials.
Two-Terminal Heterojunction Devices.
HBT D.C. Characteristics.
HBT High-Frequency Properties.
FET D.C. Characteristics.
FET High-Frequency Properties.
Transistor Fabrication and Device Comparison.
Appendices.
Index.
