Charge-Trapping Non-Volatile Memories - Volume 2--Emerging Materials and Structures

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.

• Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
  
• Details new architectures and current modeling concepts for non-volatile memory devices;
  
• Focuses on conduction through multi-layer gate dielectrics stacks.
  

Table des matières

Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.

A propos de l'auteur

Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.

Résumé

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.

Détails du produit

• Collaboration: Panagioti Dimitrakis (Editeur), Panagiotis Dimitrakis (Editeur)
• Edition: Springer, Berlin
• Langues: Anglais
• Format d'édition: Livre de poche
• Sortie: 01.01.2018
• EAN: 9783319839998
• ISBN: 978-3-31-983999-8
• Pages: 211
• Dimensions: 155 mm x 12 mm x 235 mm
• Poids: 343 g
• Illustrations: V, 211 p. 170 illus., 117 illus. in color.
• Catégories: Sciences naturelles, médecine, informatique, technique > Technique > Machines, ingénierie; B, Materialwissenschaft, Chemistry and Materials Science, Electronic Circuits and Devices, Nanotechnology, Materials science, Electronic devices & materials, Electronics, Microelectronics, Electronics and Microelectronics, Instrumentation, materials engineering, Engineering—Materials, Electronics engineering, Electronic circuits, Electronic Circuits and Systems, Electronics: circuits & components, Computer architecture & logic design, Storage media & peripherals, Computer memory systems, Memory Structures, Computer Memory Structure