Charged Semiconductor Defects - Structure, Thermodynamics and Diffusion

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Inhaltsverzeichnis

Fundamentals of Defect Ionization and Transport.- Experimental and Computational Characterization.- Trends in Charged Defect Behavior.- Intrinsic Defects: Structure.- Intrinsic Defects: Ionization Thermodynamics.- Intrinsic Defects: Diffusion.- Extrinsic Defects.

Über den Autor / die Autorin

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.

Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

Zusammenfassung

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Produktdetails

• Autoren: Meredith C Kratzer, Meredith C. Kratzer, Edmund Seebauer, Edmund G Seebauer, Edmund G. Seebauer
• Verlag: Springer, Berlin
• Sprache: Englisch
• Produktform: Fester Einband
• Erschienen: 26.06.2009
• EAN: 9781848820586
• ISBN: 978-1-84882-058-6
• Seiten: 298
• Abmessung: 155 mm x 235 mm x 25 mm
• Gewicht: 625 g
• Illustration: XIV, 298 p.
• Serien: Engineering Materials and Processes; Engineering Materials and Processes
• Themen: Naturwissenschaften, Medizin, Informatik, Technik > Physik, Astronomie > Atomphysik, Kernphysik; B, Microscopy, spectroscopy, Solid State Physics, Spectroscopy and Microscopy, Thermodynamics, Engineering Thermodynamics, Heat and Mass Transfer, Solid Mechanics, Optical and Electronic Materials, Physics and Astronomy, Mechanics, Electronic materials, Electronic devices & materials, Optical Materials, Electronics, Microelectronics, Electronics and Microelectronics, Instrumentation, Electronic Devices, Spectrum analysis, spectrochemistry, mass spectrometry, Scientific equipment, experiments & techniques, Mechanics of solids, Mechanics, Applied, Engineering thermodynamics, Heat engineering, Heat transfer, Mass transfer, Electronics engineering