High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference

Inhaltsverzeichnis

Tunnel Diode/Transistor Differntial Comparator (Q Liu); Stable High Power GaN-on-GaN HEMT (KK Chu); Noise Characteristics of Field-Plated GaN HEMTs (Y-F Wu); Simulation Study on Breakdown Behavior of Field-Plated SiC MESFETs (H Y Cha); Thick GaN Layer Grown by Ga Vapor Transport Technique (H Wu); Native Defect Compensation in III-Antimonide Bulk Substrates (R Pino); Electrical Effects of DNA Molecules on Silicon Field Effect Transistor (G Xuan); Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes (S Sawyer); Omni-Directional Reflector Using a Low Refractive Index Material (J-Q Xi); Self-Guiding in Low-Index-Contrast Planar Photonic Crystals (C Chen); and other papers.

Produktdetails

• Mitarbeit: Robert Leoni (Herausgeber), Robert E. Leoni (Herausgeber), Robert E. Leoni III (Herausgeber)
• Verlag: Ingram Publishers Services
• Sprache: Englisch
• Produktform: Fester Einband
• Erschienen: 27.04.2005
• EAN: 9789812561961
• ISBN: 978-981-256-196-1
• Serien: Selected Topics in Electronics; Selected Topics in Electronics and Systems; Selected Topics in Electronics
• Themen: Naturwissenschaften, Medizin, Informatik, Technik > Physik, Astronomie > Atomphysik, Kernphysik; TECHNOLOGY & ENGINEERING / Electronics / General, TECHNOLOGY & ENGINEERING / Electrical, Electrical Engineering, Electronics engineering