Charge-Trapping Non-Volatile Memories - Volume 2--Emerging Materials and Structures

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.

• Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
  
• Details new architectures and current modeling concepts for non-volatile memory devices;
  
• Focuses on conduction through multi-layer gate dielectrics stacks.
  

Inhaltsverzeichnis

Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.

Über den Autor / die Autorin

Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.

Zusammenfassung

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.

Produktdetails

• Mitarbeit: Panagioti Dimitrakis (Herausgeber), Panagiotis Dimitrakis (Herausgeber)
• Verlag: Springer, Berlin
• Sprache: Englisch
• Produktform: Taschenbuch
• Erschienen: 01.01.2018
• EAN: 9783319839998
• ISBN: 978-3-31-983999-8
• Seiten: 211
• Abmessung: 155 mm x 12 mm x 235 mm
• Gewicht: 343 g
• Illustration: V, 211 p. 170 illus., 117 illus. in color.
• Themen: Naturwissenschaften, Medizin, Informatik, Technik > Technik > Maschinenbau, Fertigungstechnik; B, Materialwissenschaft, Chemistry and Materials Science, Electronic Circuits and Devices, Nanotechnology, Materials science, Electronic devices & materials, Electronics, Microelectronics, Electronics and Microelectronics, Instrumentation, materials engineering, Engineering—Materials, Electronics engineering, Electronic circuits, Electronic Circuits and Systems, Electronics: circuits & components, Computer architecture & logic design, Storage media & peripherals, Computer memory systems, Memory Structures, Computer Memory Structure