Materials and Physics for Nonvolatile Memories: Volume 1160

This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.

Inhaltsverzeichnis

Part I. Advanced Flash I; Part II. Charge Trap Memory I; Part III. Magnetic Resistive RAM; Part IV. Poster Session: Advanced Flash II; Part V. Poster Session: Charge Trap II and MRAM; Part VI. Ferroelectric Memory; Part VII. Resistive Switching RAM I; Part VIII. Resistive Switching RAM II; Part IX. Poster Session: Resistive Switching RAM III; Part X. Poster Session: Phase Change RAM I; Part XI. Phase Change RAM II; Part XII. Phase Change RAM III; Author index; Subject index.

Produktdetails

• Autoren: Yoshihisa Fujisaki, Yoshihisa Waser Fujisaki
• Mitarbeit: Bonafos Caroline (Herausgeber), Yoshihisa Fujisaki (Herausgeber), Fujisaki Yoshihisa (Herausgeber), Tingkai Li (Herausgeber), Li Tingkai (Herausgeber), Rainer Waser (Herausgeber), Waser Rainer (Herausgeber)
• Verlag: Cambridge University Press ELT
• Sprache: Englisch
• Produktform: Taschenbuch
• Erschienen: 05.06.2014
• EAN: 9781107408296
• ISBN: 978-1-107-40829-6
• Seiten: 216
• Serien: MRS Proceedings; MRS Proceedings
• Themen: Naturwissenschaften, Medizin, Informatik, Technik > Technik > Sonstiges; Materials science, TECHNOLOGY & ENGINEERING / Materials Science / General