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Sommario
Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors; Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices; Nanoelectronic Device Simulation Based on the Wigner Function Formalism; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on Nanohub.org; Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems; HEMT-Based Nanometer Devices Toward Terahertz Era; Plasma Waves in Two-Dimensional Electron Systems and Their Applications; Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode; Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons; Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays with Connected and Isolated Channels; Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots; Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses; Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line; Infrared Quantum-Dot Detectors with Diffusion-Limited Capture; Magneto-Resistance in Fe/MgO/Fe Magentic Tunnel Junctions; Modeling and Implementation of Spin-Based Quantum Computation; Quantum Engineering for Threat Reduction and Homeland Security; Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability.
