Effect of Disorder and Defects in Ion-Implanted Semiconductors - Optical and Photothermal Characterization

Zusammenfassung Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

Dettagli sul prodotto

• Autori: Willardson
• Con la collaborazione di: Costantinos Christofides (Editore), Gerard Ghibaudo (Editore), Eicke R. Weber (Editore), R. K. Willardson (Editore)
• Editore: ELSEVIER SCIENCE BV
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 12.06.1997
• EAN: 9780127521466
• ISBN: 978-0-12-752146-6
• Pagine: 316
• Serie: Semiconductors & Semimetals; Semiconductors and Semimetals; Semiconductors & Semimetals
• Categoria: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Tematiche generali, enciclopedie