Fr. 336.00

Strained-Si Heterostructure Field Effect Devices

Inglese · Copertina rigida

Spedizione di solito entro 1 a 3 settimane (non disponibile a breve termine)

Descrizione

Ulteriori informazioni

Informationen zum Autor C.K Maiti, S Chattopadhyay, L.K Bera Klappentext This book brings together the materials science! manufacturing processes! and innovative research and developments of SiGe and strained-Si for the first time in book form. It contains the latest state-of-the-art information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology as well as strain-engineered MOSFETs. The book presents various aspects of silicon heterostructure materials! processes! devices! and applications. It also includes up-to-date research results! a comprehensive list of seminal references! 300 figures! and 30 tables. The diversity of R&D activities and results presented in this book will undoubtedly spark further development in the field. Zusammenfassung Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices. Inhaltsverzeichnis Introduction. Strain Engineering in Microelectronics. Strain-Engineered Substrates. Electronic Properties of Engineered Substrates. Gate Dielectrics on Engineered Substrates. Heterostructure SiGe/SiGeC MOSFETs. Strained-Si Heterostructure MOSFETs. Modeling and Simulation of Hetero-FETs.

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