High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference

Sommario

Tunnel Diode/Transistor Differntial Comparator (Q Liu); Stable High Power GaN-on-GaN HEMT (KK Chu); Noise Characteristics of Field-Plated GaN HEMTs (Y-F Wu); Simulation Study on Breakdown Behavior of Field-Plated SiC MESFETs (H Y Cha); Thick GaN Layer Grown by Ga Vapor Transport Technique (H Wu); Native Defect Compensation in III-Antimonide Bulk Substrates (R Pino); Electrical Effects of DNA Molecules on Silicon Field Effect Transistor (G Xuan); Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes (S Sawyer); Omni-Directional Reflector Using a Low Refractive Index Material (J-Q Xi); Self-Guiding in Low-Index-Contrast Planar Photonic Crystals (C Chen); and other papers.

Dettagli sul prodotto

• Con la collaborazione di: Robert Leoni (Editore), Robert E. Leoni (Editore), Robert E. Leoni III (Editore)
• Editore: Ingram Publishers Services
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 27.04.2005
• EAN: 9789812561961
• ISBN: 978-981-256-196-1
• Serie: Selected Topics in Electronics; Selected Topics in Electronics and Systems; Selected Topics in Electronics
• Categorie: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Fisica atomica, fisica nucleare; TECHNOLOGY & ENGINEERING / Electronics / General, TECHNOLOGY & ENGINEERING / Electrical, Electrical Engineering, Electronics engineering