Fundamentals of Modern Vlsi Devices

A thoroughly updated third edition of this classic text, perfect for practical transistor design and in the classroom.

Sommario

Prefaces; Physical constants and unit conversions; List of symbols; 1. Introduction; 2. Basic device physics; 3. p-n junctions and metal-silicon contacts; 4. MOS capacitors; 5. MOSFETs: long channel; 6. MOSFETs: short channel; 7. Silicon-on-insulator and double-gate MOSFETs; 8. CMOS performance factors; 9. Bipolar devices; 10. Bipolar device design; 11. Bipolar performance factors; 12. Memory devices; References; Index.

Info autore

Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow.Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.

Riassunto

A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.

Dettagli sul prodotto

• Autori: Tak H Ning, Tak H. Ning, Ning Tak H., Yuan Taur, Yuan (University of California Taur, Taur Yuan
• Editore: Cambridge University Press ELT
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 30.11.2021
• EAN: 9781108480024
• ISBN: 978-1-108-48002-4
• Pagine: 622
• Categorie: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Meccanica, acustica; TECHNOLOGY & ENGINEERING / Electronics / Optoelectronics, Electronic devices and materials, Semi-conductors & super-conductors, Transistors