Sic Materials And Devices - Volume 2

Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. This volume reviews: the growth of SiC substrates; the defects in different SiC polytypes; work on SiC JFETs; and the complex issues important for bipolar devices.

Dettagli sul prodotto

• Con la collaborazione di: Michael E Levinshtein (Editore), Michael E. Levinshtein (Editore), Michael E Levinshtein (Editore), Michael S Shur (Editore), Sergey Rumyantsev (Editore), Rumyantsev Sergey (Editore), Michael S Shur (Editore), Michael S. Shur (Editore)
• Editore: Ingram Publishers Services
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 22.01.2007
• EAN: 9789812703835
• ISBN: 978-981-270-383-5
• Serie: Selected Topics in Electronics and Systems; Selected Topics in Electronics and Systems; Selected Topics in Electronics
• Categorie: Scienze naturali, medicina, informatica, tecnica > Tecnica > Elettronica, elettrotecnica, telecomunicazioni; TECHNOLOGY & ENGINEERING / Electronics / General, Electronics engineering, Silicon Carbide, Transistors, Substrates, Crystal Growth