Electrical and switching behavior of quaternary defect chalcopyrite

Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.

Info autore

Dr.Amira Mohamed Hasanein ShakraThe author was born in Egypt on 19/8/1977.She graduated from physics department,Faculty of Education,Ain Shams university in 1999,she has got her M.Sc(Physics)2004 and Phd(Physics)2009.Scientific careers.Assistant lecture 2004 and Physics lecture2009 at Physics department,Faculty of Education,Ain Shams University.

Dettagli sul prodotto

• Autori: Bak, Gamal Bakr Sakr, Madih Fadel Abd El-Aal, Madiha Fadel Abd El-Aal, Amir Mohamed Shakra, Amira Mohamed Shakra
• Editore: LAP Lambert Academic Publishing
• Lingue: Inglese, Tedesco
• Formato: Tascabile
• Pubblicazione: 01.01.2016
• EAN: 9783659892608
• ISBN: 978-3-659-89260-8
• Pagine: 56
• Categoria: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Altro