Investigation Of AlN Films And Creating Devices Based On Them

Progress of the modern means of communication, which mostly involves the increase of operating frequency of devices, dictates the necessity of implementing new materials that would allow to access higher frequencies in the microwave band. A number of exceptional characteristics make aluminum nitride a quite perspective material for a great variety of implementations, especially for creating acoustoelectronic devices. The goals of the present work were studying the processes of acquiring the aluminum nitride thin films using RF magnetron sputtering technique and investigating the possibilities of applying these films to create acoustoeletronic devices working on microwave and extremely high frequencies.

Info autore

Rinat Naimovich Khanbekov, graduate of the Solid State Physics Department of Saratov State University. Worked in the Metamaterials laboratory of SSU, Saratov.

Dettagli sul prodotto

• Autori: Rinat Khanbekov
• Editore: LAP Lambert Academic Publishing
• Lingue: Inglese
• Formato: Tascabile
• Pubblicazione: 31.05.2015
• EAN: 9783659708213
• ISBN: 978-3-659-70821-3
• Pagine: 64
• Categoria: Scienze naturali, medicina, informatica, tecnica > Fisica, astronomia > Meccanica, acustica