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During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
Sommario
1 Elements for Designing an X-Ray Diffraction Experiment.- 2 Diffractometers and Reflectometers.- 3 Scans and Resolution in Angular and Reciprocal Space.- 4 Basic Principles.- 5 Kinematical Theory.- 6 Dynamical Theory.- 7 Semikinematical Theory.- 8 Determination of Layer Thicknesses of Single Layers and Multilayers.- 9 Lattice Parameters and Strains in Epitaxial Layers and Multilayers.- 10 Diffuse Scattering From Volume Defects in Thin Layers.- 11 X-Ray Scattering by Rough Multilayers.- 12 X-Ray Scattering by Artificially Lateral Semiconductor Nanostructures.- 13 Strain Analysis in Periodic Nanostructures.- 14 X-Ray Scattering from Self-Organized Structures.- References.
Riassunto
During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.
