Low Power and Reliable SRAM Memory Cell and Array Design

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Sommario

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Riassunto

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Dettagli sul prodotto

• Con la collaborazione di: Koichir Ishibashi (Editore), Koichiro Ishibashi (Editore), OSADA (Editore), Osada (Editore), Kenichi Osada (Editore)
• Editore: Springer, Berlin
• Lingue: Inglese
• Formato: Copertina rigida
• Pubblicazione: 01.09.2011
• EAN: 9783642195679
• ISBN: 978-3-642-19567-9
• Pagine: 144
• Dimensioni: 161 mm x 15 mm x 243 mm
• Peso: 378 g
• Illustrazioni: XII, 144 p.
• Serie: Springer Series in Advanced Microelectronics; Springer Series in Advanced Microelectronics
• Categoria: Scienze naturali, medicina, informatica, tecnica > Tecnica > Elettronica, elettrotecnica, telecomunicazioni