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The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Sommario
Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation.- Atomistic Modeling of Defect Diffusion in SiGe.- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches.- Molecular Dynamics Modeling of Octadecaborane Implantation into Si.- High Performance, Strained-Ge, Heterostructure p-MOSFETs.- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations.- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs.- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants.- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias.- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology.- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT).- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment.- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs.- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs.- Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs.- Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems.- Energy Conservation in Collisional Broadening.- A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells.- Upcoming Challenges for Process Modeling.- Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation.- Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs.- 'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices.- Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs.- Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL.- Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs.- Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner.- 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor.- Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond.- Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond.- Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region.- A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase.- Compact Modeling of Phase-Change Memories.- Modeling of NBTI Degradation for SiON pMOSFET.- Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods.- Analysis of Silicon Dioxide Interface Transition Region in MOS Structures.- Tunneling Properties of MOS Systems Based on High-k Oxides.- First-Principles Investigation on Oxide Trapping.- A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach.- Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2.- Upcoming Physics Challenges for Device Modeling.- Transient Characterization of Interface Traps in 4H-SiC MOSFETs.- Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-PowerConditions.- Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes.- Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures.- Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands.- Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs.- Modeling of Macroscopic Transport Parameters in Inversi
Riassunto
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
