Hot-Carrier Effects in Mos Devices

Zusammenfassung The exploding number of uses for ultra fast, ultra small integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. This work encompasses the research and discoveries made in the fast-paced area of hot carriers, and also includes the basics of MOS devices.

List of contents

MOS Device Fundamentals
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)

Product details

• Authors: Akemi Miura-Hamada, Akemi (Hitachi Ltd.) Miura-Hamada, Miura-Hamada Akemi, Eiji Takeda, Eiji (Hitachi Ltd.) Takeda, Eiji Yang Takeda, Takeda Eiji, Cary Y. Yang, Cary Y. (Santa Clara University) Yang, Yang Cary Y.
• Publisher: ELSEVIER SCIENCE BV
• Languages: English
• Product format: Hardback
• Released: 28.11.1995
• EAN: 9780126822403
• ISBN: 978-0-12-682240-3
• No. of pages: 312
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; TECHNOLOGY & ENGINEERING / Electronics / Circuits / General, Electronics: circuits and components, Electronic devices and materials, Circuits & components, Semi-conductors & super-conductors