Radio Frequency Transistors - Principles and Practical Applications

Klappentext This newly revised edition adds two entirely new chapters! one of LDMOS high power RF transistors and how they differ from bipolars! and TMOS FETs! etc. as well as another chapter on designing high power RF amplifiers using LDMOS. Zusammenfassung A tool kit for successful RF circuit design! this work contains practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. It focuses primarily on the more difficult area of high power transistor amplifier design and construction. Inhaltsverzeichnis Understanding RF data sheet parameters; DC specifications; Functional characteristics for power transistors! low power transistors! linear modules! and power modules; RF transistor fundamentals; Transistor characteristics in specific applications; Bandwidth considerations; MOSFETs vs. bipolars; FETs and BJTs; types of transistors; Comparing parameters; Circuit configurations; Common emitter and common source; Common Base and common gate; Common collector and common drain; Classes of operation; Forms of modulation; Operating transistors in pulse mode; Reliability considerations; Construction techniques; Types of packages; Emitter/source inductance; Laying out a circuit board; Tips for systematic PC layout design; Mounting RF devices; RF modules; Power amplifier design; Single-ended RF amplifier designs; Parallel transistor amplifiers; MOSFETs; Push-pull amplifiers; Computer-aided design programs; Circuit testing; Types of low-pass filters; Wideband impedance matching; Conventional transformers; Twisted wire transformers; Transmission line transformers; Equal delay transmission line transformers; Power splitting and combining; Basic types of power combiners; In phase and 180 degree combiners; 90 degree hybrids; Line hybrids; Ring hybrids; Branch line couplers; Wilkinson couplers; Frequency compensation and negative feedback; LDMOS high power transistors; Differences between LDMOS high power transistors and bipolars; Differences between LDMOS high power transistors and TMOS FETs; Designing high power RF amplifiers using LDMOS; Small signal amplifier design; Scattering parameters; Noise parameters; Biasing considerations; Power gain; Stability; Actual steps in low power amplifier design; and much more ...

Product details

• Authors: Norm Dye, Norman Dye, Norman (Began His Electrical Engineering Care Dye, Norman (Began his electrical engineering career in 1946 with the U.S. Navy as an electronics technician. After receiving engineering degrees from Vanderbilt University and the Massachusetts Institute of Technology Dye, Norman E. Dye, Norman Granberg Dye, Helge Granberg, Helge (Native of Finland. Electronics specialist who has held a number of positions with General Electric and Motorola.) Granberg, Larry Leighton
• Publisher: ELSEVIER SCIENCE BV
• Languages: English
• Product format: Paperback / Softback
• Released: 08.03.2001
• EAN: 9780750672818
• ISBN: 978-0-7506-7281-8
• No. of pages: 320
• Series: Edn Series for Design Engineer; Edn Series for Design Engineer; EDN Series for Design Engineers
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; Product Design, DESIGN / Product, TECHNOLOGY & ENGINEERING / Electronics / General, TECHNOLOGY & ENGINEERING / Electronics / Circuits / General, TECHNOLOGY & ENGINEERING / Radio, Electronic devices & materials, Electronics engineering, Radio technology, Electronics: circuits and components, Electronic devices and materials, Circuits & components