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This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices.Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.
List of contents
Preface1 General Properties of ZnO1.1 Crystal Structure1.2 Lattice Parameters1.3 Electronic Band Structure1.4 Mechanical Properties1.5 Vibrational Properties1.6 Thermal Properties1.7 Electrical Properties of Undoped ZnO2 ZnO Growth2.1 Bulk Growth2.2 Substrates2.3 Epitaxial Growth Techniques3 Optical Properties3.1 Optical Processes in Semiconductors3.2 Optical Transitions in ZnO3.3 Defects in ZnO3.4 Refractive Index of ZnO and MgZnO3.5 Stimulated Emission in ZnO3.6 Recombination Dynamics in ZnO3.7 Nonlinear Optical Properties4 Doping of ZnO4.1 n-Type Doping4.2 p-Type Doping5 ZnO-Based Dilute Magnetic Semiconductors5.1 Doping with Transition Metals5.2 General Remarks about Dilute Magnetic Semiconductors5.3 Classification of Magnetic Materials5.4 A Brief Theory of Magnetization5.5 Dilute Magnetic Semiconductor Theoretical Aspects5.6 Measurements Techniques for Identification of Ferromagnetism5.7 Magnetic Interactions in DMS5.8 Theoretical Studies on ZnO-Based Magnetic Semiconductors5.9 Experimental Results on ZnO-Based Dilute Magnetic Semiconductors6 Bandgap Engineering6.1 MgxZn1-xO Alloy6.2 BexZn1-xO Alloy6.3 CdyZn1-yO Alloy7 ZnO Nanostructures7.1 Synthesis of ZnO Nanostructures7.2 Applications of ZnO Nanostructures8 Processing, Devices, and Heterostructures8.1 A Primer to Semiconductor-Metal Contacts8.2 Ohmic Contacts to ZnO8.3 Schottky Contacts to ZnO8.4 Etching of ZnO8.5 Heterostructure Devices8.6 Piezoelectric Devices8.7 Sensors and Solar Cells Based on ZnO Nanostructures8.8 Concluding Remarks
About the author
Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.
Ümit Özgür is a research scientist in the Electrical Engineering Department at Virginia
Commonwealth University. He has received BS degrees in EE and physics from Bogazici
University, Turkey, and,in 2003, his Ph.D. degree from Duke University, where he has made many contributions to the understanding of ultrafast carrier dynamics in nitride heterostructures. Dr. Özgür has authored over 50 scientific publications and several book chapters on growth, fabrication, and characterization of wide bandgap semiconductor materials and nanostructures based on group III-nitrides and ZnO. He is a member of the Institute of Electrical and Electronics Engineers and the American Physical Society.
Summary
This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices.
Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices.
Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.
