Terrestrial Neutron-induced Soft Error In Advanced Memory Devices

Terrestrial neutron-induced soft errors of semiconductor memory devices are a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant topics in terrestrial neutron-induced soft errors.

List of contents

Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Test in the Terrestrial Field; Neutron Irradiation Test Facilities; Review of Experimental Data and Discussions; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of Neutron Test Method; Summary and Challenges.

Product details

• Authors: Mamoru Baba, Ibe Eishi, Eishi Ibe, Takashi Nakamura, Yasuo Yahagi
• Publisher: World Scientific
• Languages: English
• Product format: Hardback
• Released: 01.01.2008
• No. of pages: 368
• Dimensions: 155 mm x 231 mm x 20 mm
• Weight: 658 g
• Subject: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering