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Informationen zum Autor DR VOLKAN KURSUN, Department of Electrical & Computer Engineering, University of Rochester, Rochester, New York 14627-0231, USA. PROFESSOR DR EBY G. FRIEDMAN, Department of Electrical & Computer Engineering , University of Rochester , Rochester, New York 14627-0231, USA. Klappentext This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by which sub-threshold and gate oxide leakage currents are generated. The authors present a comprehensive review of state-of-the-art dynamic, static supply and threshold voltage scaling techniques and discuss the pros and cons of supply and threshold voltage scaling techniques. Zusammenfassung This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by which sub-threshold and gate oxide leakage currents are generated. The authors present a comprehensive review of state-of-the-art dynamic, static supply and threshold voltage scaling techniques and discuss the pros and cons of supply and threshold voltage scaling techniques. Inhaltsverzeichnis About the Authors xi Preface xiii Acknowledgments xv Chapter 1 Introduction 1 1.1 Evolution of Integrated Circuits 3 1.2 Outline of the Book 14 Chapter 2 Sources of Power Consumption in CMOS ICs 19 2.1 Dynamic Switching Power 19 2.2 Leakage Power 22 2.2.1 Subthreshold Leakage Current 22 2.2.1.1 Short-Channel Effects 23 2.2.1.2 Drain-Induced Barrier-Lowering 25 2.2.1.3 Characterization of Subthreshold Leakage Current 25 2.2.2 Gate Oxide Leakage Current 28 2.2.2.1 Effect of Technology Scaling on Gate Oxide Leakage 29 2.2.2.2 Characterization of Gate Oxide Leakage Current 32 2.2.2.3 Alternative Gate Dielectric Materials 38 2.3 Short-Circuit Power 39 2.4 Static DC Power 43 Chapter 3 Supply and Threshold Voltage Scaling Techniques 45 3.1 Dynamic Supply Voltage Scaling 48 3.2 Multiple Supply Voltage CMOS 51 3.3 Threshold Voltage Scaling 54 3.3.1 Body Bias Techniques 58 3.3.1.1 Reverse Body Bias 58 3.3.1.2 Forward Body Bias 64 3.3.1.3 Bidirectional Body Bias 71 3.3.2 Multiple Threshold Voltage CMOS 74 3.4 Multiple Supply and Threshold Voltage CMOS 77 3.5 Dynamic Supply and Threshold Voltage Scaling 80 3.6 Circuits with Multiple Voltage and Clock Domains 81 3.7 Summary 83 Chapter 4 Low-Voltage Power Supplies 85 4.1 Linear DC-DC Converters 87 4.2 Switched-Capacitor DC-DC Converters 90 4.3 Switching DC-DC Converters 91 4.3.1 Operation of a Buck Converter 92 4.3.2 Power Reduction Techniques for Switching DC-DC Converters 95 4.4 Summary 95 Chapter 5 Buck Converters for On-Chip Integration 99 5.1 Circuit Model of a Buck Converter 101 5.1.1 MOSFET-Related Power Losses 101 5.1.2 Filter Inductor-Related Power Losses 103 5.1.3 Filter Capacitor-Related Power Losses 103 5.1.4 Total Power Consumption of a Buck Converter 104 5.2 Efficiency Analysis of a Buck Converter 104 5.2.1 Circuit Analysis for Global Maximum Efficiency 105 5.2.2 Circuit Analysis with Limited Filter Capacitance 108 5.2.3 Output Voltage Ripple Constraint 109 5.3 Simulation Results 109 5.4 Summary 112 Chapter 6 Low-Voltage Swing Monolithic DC-DC Conversion 115
