GaN and SiC Power Devices - From Fundamentals to Applied Design and Market Analysis

This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.

List of contents

Introduction.- Wide bandgap Semiconductors.- GaN overview.- SiC overview.- Electrical Characteristics.- Circuit Design with GaN and SiC.- Electric Vehicles.- Renewable Energies.- Motor Drivers.- Thermal Management.- Power Supplies.- Lidar and Space Applications.

About the author

Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.

Product details

• Authors: Maurizio Di Paolo Emilio
• Publisher: Springer, Berlin
• Languages: English
• Product format: Paperback / Softback
• Released: 15.02.2025
• EAN: 9783031506567
• ISBN: 978-3-0-3150656-7
• No. of pages: 264
• Dimensions: 168 mm x 15 mm x 240 mm
• Weight: 475 g
• Illustrations: XV, 264 p. 47 illus., 41 illus. in color.
• Series: Synthesis Lectures on Engineering, Science, and Technology
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; Elektrotechnik, Elektronik, Electronics and Microelectronics, Instrumentation, Electronic Devices, Power electronics, Electronic Circuits and Systems, Power Management, Vertical GaN and SiC Power Devices, Gallium Nitride and Silicon Carbide Power Devices, Wide Bandgap Semiconductors for Power Electronics, Circuit design in Power Electronics