III-Nitride Materials - Properties, Growth, and Applications

¿-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting, traffic signage, landscape lighting, etc. Additionally, they hold promise for next-generation displays, e.g., microLED displays, as well as field effect transistors (FETs), for example, high electron mobility transistors (HEMTs) and p-channel FETs. The investigation of antipolar (N-polar) epitaxy and devices is also flourishing. The following Special Issue reprint gathers research achievements related to III-nitride materials and their associated devices, covering growth methods, device fabrication technology, structural design, and physical mechanisms of III-nitride semiconductors, devices, etc.

Product details

• Publisher: Mdpi Ag
• Languages: English
• Product format: Hardback
• Released: 25.09.2024
• EAN: 9783725821075
• ISBN: 978-3-7258-2107-5
• No. of pages: 114
• Dimensions: 175 mm x 250 mm x 12 mm
• Weight: 485 g
• Subject: Natural sciences, medicine, IT, technology > Chemistry > Inorganic chemistry