High Mobility Materials for CMOS Applications

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.

List of contents

1. CMOS and Beyond CMOS: Scaling Challenges2. Opportunities for high mobility materials integrated on a Si platform3. Monolithic integration of InGaAs on Si(001) substrate for Logic devices4. III-N epitaxy on Si for power electronics5. Impact of defects on the performance of high-mobility semiconductor devices6. (Si)Ge devices7. III-V Devices and Technology for CMOS8. Beyond CMOS9. Optoelectronic devices integrated on silicon10. High mobility devices for digital applications

Product details

• Assisted by: Nadine Collaert (Editor), Collaert Nadine (Editor)
• Publisher: Elsevier Science & Technology
• Languages: English
• Product format: Paperback / Softback
• Released: 20.06.2018
• EAN: 9780081020616
• ISBN: 978-0-08-102061-6
• Dimensions: 152 mm x 18 mm x 229 mm
• Weight: 630 g
• Series: Woodhead Publishing Series in Electronic and Optical Materials
• Subjects: Natural sciences, medicine, IT, technology > Physics, astronomy > Atomic physics, nuclear physics; Materials science, TECHNOLOGY & ENGINEERING / Materials Science / General