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The semiconductor industry is undergoing a transition from the use of standard CMOS silicon to novel device structures that include carbon nanotubes, graphene, quantum dots and III-V materials. A must-read for anyone serious about future nanofabrication technologies, this book addresses the state of the art in nano devices for electronics. It explores exciting opportunities in emerging materials that will take system performance beyond what is offered by traditional CMOS-based microelectronics. The text features contributions from top international experts from industry and academia. Topics covered range from electrical propagation on carbon nanotubes to GaN HEMTs technology and applications.
List of contents
Section I: Semiconductor MaterialsElectrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models
Monolithic Integration of Carbon Nanotubes and CMOS
Facile, Scalable, and Ambient-Electrochemical Route for Titania Memristor Fabrication
Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years
Section II: Silicon Devices and TechnologySiGe BiCMOS Technology and Devices
Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm
Development of 3D Chip Integration Technology
Embedded Spin-Transfer-Torque MRAM
Nonvolatile Memory Device: Resistive Random Access Memory
DRAM Technology
Monocrystalline Silicon Solar Cell Optimization and Modeling
Radiation Effects on Silicon Devices
Section III: Compound Semiconductor Devices and TechnologyGaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology
GaN HEMTs Technology and Applications
Surface Treatment, Fabrication, and Performances of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors
GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices
GaAs HBT and Power Amplifier Design for Handset Terminals
Resonant Tunneling and Negative Differential Resistance in III-Nitrides
New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors
About the author
Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.
