Gallium Arsenide and Related Compounds 1991, Proceedings of the - Eighteenth Int Symposium, 9 12 September 1991, Seattle, Us

Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys.

List of contents

Plenary papers; epitaxy, mainly molecular beam; MESFETs and MODFETs; processing; characterization; HBTs and InGaAlAs FETs; ordering; quantum wells; opto-electronics; OMPVE; superlattices.

About the author

Gerald B. Stringfellow

Summary

Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys.

Product details

• Authors: G.B. Stringfellow, Gerald B Stringfellow, Gerald B. Stringfellow
• Publisher: Taylor & Francis Ltd.
• Languages: English
• Product format: Paperback / Softback
• Released: 02.10.2019
• EAN: 9780367402891
• ISBN: 978-0-367-40289-1
• No. of pages: 680
• Subject: Natural sciences, medicine, IT, technology > Technology > Heat, energy and power station engineering