Handbook for Iii-V High Electron Mobility Transistor Technologies

Summary

The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.

Product details

• Authors: D. Ajayan Nirmal
• Assisted by: J. Ajayan (Editor), D. Nirmal (Editor)
• Publisher: Taylor & Francis Ltd.
• Languages: English
• Product format: Hardback
• Released: 21.05.2019
• EAN: 9781138625273
• ISBN: 978-1-138-62527-3
• No. of pages: 442
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; SCIENCE / Physics / General, TECHNOLOGY & ENGINEERING / Electronics / Circuits / General, TECHNOLOGY & ENGINEERING / Electrical, TECHNOLOGY & ENGINEERING / Electronics / Microelectronics, Electronic devices & materials, Electronics: circuits and components, Electronic devices and materials, Circuits & components