Fr. 256.00

Sige and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

English · Hardback

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Informationen zum Autor John D. Cressler Klappentext Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques! EPI defects and dopant diffusion in thin films! stability constraints! and electronic properties of SiGe and Si-C alloys. Zusammenfassung Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys. Inhaltsverzeichnis Contents Introduction The Big Picture; J.D. Cressler A Brief History of the Field; J.D. Cressler SiGe and Si Strained-Layer Epitaxy Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre! F. Deléglise! C. Fellous! L. Rubaldo! and A. Talbot MBE Growth Techniques; M. Oehme and E. Kasper UHV/CVD Growth Techniques; T.N. Adam Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich Stability Constraints in SiGe Epitaxy; A. Fischer Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. Hoyt Carbon Doping of SiGe; H.J. Osten Contact Metallization on Silicon-Germanium; C.K. Maiti Selective Etching Techniques for SiGe/Si; S. Monfray! S. Borel! and T. Skotnicki Appendices Properties of Silicon and Germanium; J.D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi Index

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