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Informationen zum Autor John D. Cressler Klappentext Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs)! heterostructure FETs! other heterostructure devices! and optoelectronic components. This book covers topics including device physics! broadband noise! performance limits! reliability! and engineered substrates. Zusammenfassung Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates. Inhaltsverzeichnis Contents Introduction The Big Picture; J.D. Cressler A Brief History of the Field; J.D. Cressler SiGe HBTs Overview: SiGe HBTs; J.D. Cressler Device Physics; J.D. Cressler Second-Order Effects; J.D. Cressler Low-Frequency Noise; G. Niu Broadband Noise; D.R. Greenberg Microscopic Noise Simulation; G. Niu Linearity; G. Niu pnp SiGe HBTs; J.D. Cressler Temperature Effects; J.D. Cressler Radiation Effects; J.D. Cressler Reliability Issues; J.D. Cressler Self-Heating and Thermal Effects; J-S. Rieh Device-Level Simulation; G. Niu SiGe HBT Performance Limits; G. Freeman! A. Stricker! J-S. Rieh! and D.R. Greenberg Heterostructure FETs Overview: Heterostructure FETs; J.D. Cressler Biaxial Strained Si CMOS; K. Rim Uniaxial Stressed Si MOSFET; S.E. Thompson SiGe-Channel HFETs; S. Banerjee Industry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies; S.E. Thompson Other Heterostructure Devices Overview: Other Heterostructure Devices; J.D. Cressler Resonant Tunneling Devices; S. Tsujino! D. Grützmacher! and U. Gennser IMPATT Diodes; E. Kasper and M. Oehme Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. Hull Optoelectronic Components Overview: Optoelectronic Components; J.D. Cressler Si-SiGe LEDs; K.L. Wang! S. Tong! and H.J. Kim Near-Infrared Detectors; L. Colace! G. Masini! and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving Si-SiGe Quantum Cascade Emitters; D.J. Paul Appendices Properties of Silicon and Germanium; J.D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi ...
