Gallium Arsenide and Related Compounds 1991, Proceedings of the - Eighteenth Int Symposium, 9 12 September 1991, Seattle, Us

Informationen zum Autor G.B. Stringfellow (University of Utah) Klappentext Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds. Zusammenfassung Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.. Inhaltsverzeichnis Plenary papers; epitaxy, mainly molecular beam; MESFETs and MODFETs; processing; characterization; HBTs and InGaAlAs FETs; ordering; quantum wells; opto-electronics; OMPVE; superlattices.

Product details

• Authors: G.B. Stringfellow, Gerald B. Stringfellow
• Publisher: Taylor & Francis Ltd.
• Languages: English
• Product format: Hardback
• Released: 01.01.1992
• EAN: 9780854984107
• ISBN: 978-0-85498-410-7
• No. of pages: 680
• Subjects: Natural sciences, medicine, IT, technology > Technology > Miscellaneous; ORGANIC CHEMISTRY, SCIENCE / Chemistry / Organic, SCIENCE / Physics / Electricity, SCIENCE / Physics / Magnetism, SCIENCE / Physics / Electromagnetism, Materials science, Electricity, electromagnetism & magnetism, TECHNOLOGY & ENGINEERING / Materials Science / General, Electricity, electromagnetism and magnetism