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Informationen zum Autor Dr Steven H. Voldman received his B.S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T; MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM's Resident Study Fellow Program. At M.I.T, he worked as a member of the M.I.T. Plasma Fusion Center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability device engineer, his work include pioneering work in bipolar/ CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he has been responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET Scaling, device simulations, copper, low-k, MR heads, CMOS, SOI , Sage and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996-2000), ESD Association General Chairman and Board of Directors, International Reliability Physics (IRPS) ESD/Latchup Chairman, International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman, ESD Association Standard Development Chairman on Transmission Line Pulse Testing, ESD Education Committee, and serves on the ISQED Committee, Taiwan ED Conference (T-ESDC) Technical Program Committee. Voldman has provided ESD lectures for universities (e.g. MIT Lecture Series, Taiwan National Chiao-Tung University, and Singapore Nanyang Technical University). He is a recipient of over 125 US patents, over 100 publications, and also provides talks on patenting, and invention. He has been featured in EE Times, Intellectual Property Law and Business and authored the first article on ESD phenomena for the October 2002 edition of Scientific American entitled Lightening Rods for Nanostructures , and Pour La Science, Le Scienze, and Swiat Nauk international editions. Dr. Voldman was recently accepted as the first IEEE Fellow for ESD phenomena in semiconductors for ' contributions to electrostatic discharge protection CMOS, SOI and SiGe technologies'. Klappentext In the continued quest to obtain a better understanding of Electrostatic Discharge (ESD), this book aims to provide a clear insight into how changes in semiconductor technology over the last 15 years have influenced the ESD robustness of semiconductor components. ESD Physics and Devices offers an accessible introduction to the subject covering thermal, mechanical and electrostatic phenomena as well as the techniques from physics and mathematics that are useful for electro-thermal and failure physics. Addresses the physics of ESD protection in CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe), and future technologies from FinFETs to Carbon nano-tubes. Derives electro-thermal models from first principles highlighting early research, electro-thermal physical models and techniques. Introduces traditional and modern techniques to old problems in ESD, covering Boltzmann transforms and the Duhamel principle, as well as transmission line representations and transfer resistance models. ESD Physics and Devices looks at the implications of ESD technology transitions for each physical region of a semiconductor device, region by region, from the substrate wafer to the interconnects. This book is a valuable reference for a range of advanced students, researchers and engineers in the fields of semiconductor process engineering, electrical engineering, materials science, mathematics and physics. Zusammenfassung Addresses Electrostatic Discharge (ESD) physics! devices! circuits and design across the full range of integrated circuit technologies. This book provides a treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. ...
