High Performance Devices - Proceedings of the 2004 IEEE Lester Eastman Conference

List of contents

Tunnel Diode/Transistor Differntial Comparator (Q Liu); Stable High Power GaN-on-GaN HEMT (KK Chu); Noise Characteristics of Field-Plated GaN HEMTs (Y-F Wu); Simulation Study on Breakdown Behavior of Field-Plated SiC MESFETs (H Y Cha); Thick GaN Layer Grown by Ga Vapor Transport Technique (H Wu); Native Defect Compensation in III-Antimonide Bulk Substrates (R Pino); Electrical Effects of DNA Molecules on Silicon Field Effect Transistor (G Xuan); Noise Characteristics of 340 nm and 280 nm GaN-Based Light Emitting Diodes (S Sawyer); Omni-Directional Reflector Using a Low Refractive Index Material (J-Q Xi); Self-Guiding in Low-Index-Contrast Planar Photonic Crystals (C Chen); and other papers.

Product details

• Assisted by: Robert Leoni (Editor), Robert E. Leoni (Editor), Robert E. Leoni III (Editor)
• Publisher: World Scientific Publishing Company
• Languages: English
• Product format: Hardback
• Released: 27.04.2005
• EAN: 9789812561961
• ISBN: 978-981-256-196-1
• No. of pages: 316
• Dimensions: 170 mm x 255 mm x 22 mm
• Weight: 680 g
• Series: Selected Topics in Electronics; Selected Topics in Electronics
• Subject: Natural sciences, medicine, IT, technology > Physics, astronomy > Atomic physics, nuclear physics