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The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations.
Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting.
Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
List of contents
- Contributor contact details
- Woodhead Publishing Series in Electronic and Optical Materials
- Dedication
- Preface
- Part I: Materials and fabrication
- 1: Molecular beam epitaxy (MBE) growth of nitride semiconductors
- Abstract
- 1.1 Introduction
- 1.2 Molecular beam epitaxial (MBE) growth techniques
- 1.3 Plasma-assisted MBE (PAMBE) growth of nitride epilayers and quantum structures
- 1.4 Nitride nanocolumn (NC) materials
- 1.5 Nitride nanostructures based on NCs
- 1.6 Conclusion
- 2: Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materials
- Abstract
- 2.1 Introduction
- 2.2 MOCVD systems
- 2.3 Planetary reactors
- 2.4 Close-coupled showerhead (CCS) reactors
- 2.5 In situ monitoring systems and growing nitride-based materials
- 2.6 Acknowledgements
- 3: Gallium nitride (GaN) on sapphire substrates for visible LEDs
- Abstract
- 3.1 Introduction
- 3.2 Sapphire substrates
- 3.3 Strained heteroepitaxial growth on sapphire substrates
- 3.4 Epitaxial overgrowth of GaN on sapphire substrates
- 3.5 GaN growth on non-polar and semi-polar surfaces
- 3.6 Future trends
- 4: Gallium nitride (GaN) on silicon substrates for LEDs
- Abstract
- 4.1 Introduction
- 4.2 An overview of gallium nitride (GaN) on silicon substrates
- 4.3 Silicon overview
- 4.4 Challenges for the growth of GaN on silicon substrates
- 4.5 Buffer-layer strategies
- 4.6 Device technologies
- 4.7 Conclusion
- 5: Phosphors for white LEDs
- Abstract
- 5.1 Introduction
- 5.2 Optical transitions of Ce3 + and Eu2 +
- 5.3 Chemical composition of representative nitride and oxynitride phosphors
- 5.4 Compounds activated by Eu2 +
- 5.5 Compounds activated by Ce3 +
- 5.6 Features of the crystal structure of nitride and oxynitride phosphors
- 5.7 Features of optical transitions of nitride and oxynitride phosphors
- 5.8 Conclusion and future trends
- 5.9 Acknowledgements
- 6: Fabrication of nitride LEDs
- Abstract
- 6.1 Introduction
- 6.2 GaN-based flip-chip LEDs and flip-chip technology
- 6.3 GaN FCLEDs with textured micro-pillar arrays
- 6.4 GaN FCLEDs with a geometric sapphire shaping structure
- 6.5 GaN thin-film photonic crystal (PC) LEDs
- 6.6 PC nano-structures and PC LEDs
- 6.7 Light emission characteristics of GaN PC TFLEDs
- 6.8 Conclusion
- 7: Nanostructured LEDs
- Abstract
- 7.1 Introduction
- 7.2 General mechanisms for growth of gallium nitride (GaN) related materials
- 7.3 General characterization method
- 7.4 Top-down technique for nanostructured LEDs
- 7.5 Bottom-up technique for GaN nanopillar substrates prepared by molecular beam epitaxy
- 7.6 Conclusion
- 8: Nonpolar and semipolar LEDs
- Abstract
- 8.1 Motivation: limitations of conventional c-plane LEDs
- 8.2 Introduction to selected nonpolar and semipolar planes
- 8.3 Challenges in nonpolar and semipolar epitaxial growth
- 8.4 Light extraction for nonpolar and semipolar LEDs
- Part II: Performance of nitride LEDs
- 9: Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs
- Abstract
- 9.1 Introduction
- 9.2 Recombination models in LEDs
- 9.3 Thermal roll-over in gallium indium nitride (GaInN) LEDs
- 9.4 Auger recombination
- 9.5 High-level injection and the asymmetry of carrier concentration and mobility
- 9.6 Non-capture of carriers
- 9.7 Polarization fields
- 9.8 Carrier delo
