Group Iii-Nitride Semiconductor Optoelectronics

Informationen zum Autor C. Jayant Praharaj, PhD, is a Research and Development Scientist at Band Photonics Materials in California. He received his PhD in Electrical and Computer Engineering from Cornell University in 2004. He has authored several research articles in peer-reviewed journals and conference proceedings. Klappentext Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloysIn Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems.The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits.Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction.Readers will also benefit from:* A thorough introduction to the band structure and optical properties of group III-nitride semiconductors* Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures* Practical discussions of the optical properties of low dimensional structures in group III-nitrides* In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits* Concise treatments of the quantum optical properties of nitride semiconductor devicesPerfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides. Zusammenfassung Group III-Nitride Semiconductor OptoelectronicsDiscover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloysIn Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. C. Jayant Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems.The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits.Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Chapters provide thorough connections between theory and experimental advances for optoelectronics and photonics.Readers will also benefit from:* A thorough introduction to the band structure and optical properties of group III-nitride semiconductors* Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures* Practical discussions of the optical properties of low dimensional structures in group III- nitrides* In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integr...

List of contents

Preface ix
 
1 Introduction 1
 
2 Band Structure and Optical Properties of Group III-Nitride Semiconductors 3
 
Crystal Symmetry (Wurtzite and Cubic Phases) 3
 
Lattice Periodicity and Crystal Hamiltonian 4
 
Bloch's Theorem and Nature of Electron States 4
 
Quantum Mechanical Properties Corresponding to Bloch States 5
 
Light-Matter Interaction in Semiconductors 7
 
Spontaneous and Piezoelectric Polarization 11
 
Phonon Spectrum 13
 
Scattering Mechanisms 13
 
Donors and Deep Acceptors 17
 
3 Growth and Doping of Group III-Nitride Devices 19
 
Major Epitaxial Growth Methods 19
 
In Situ and Implant Doping 31
 
Dislocations and Point Defects 31
 
Dopant-induced Defects 31
 
Substrates and Growth 31
 
Gallium Nitride Growth on Silicon Substrates 32
 
4 Optical Properties of Low-dimensional Structures in Group III Nitrides 39
 
Quantum Wells, Quantum Wires, and Quantum Dots 39
 
The k.p Method 43
 
Crystal Symmetry and Low-dimensional Structures 50
 
Alloy Disorder and Density Functional Theory Electronic Structure Calculation 51
 
Deviations from Charge Neutrality and Effect on Electronic Structure 54
 
Polarization Engineering Using Quaternaries and Complex Structures 55
 
Dislocations in Low-dimensional Structures and Carrier Dynamics 57
 
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 57
 
5 Light-emitting Diodes and Lasers 67
 
Blue, Green, and Ultraviolet (UV) LEDs 67
 
Light-emitting Diode Basic Operating Principles 71
 
Blue, Green, and UV Lasers 72
 
Blue, Green, and Device Laser Materials - Device Considerations 78
 
Nanowire microLEDs 80
 
LED Quantum Efficiencies and Laser Threshold Currents in Quantum Wires and Quantum Dots 80
 
Auger Recombination and Efficiency Droop in Group III-Nitride LEDs 82
 
Dislocations in Low-dimensional Structures and Carrier Dynamics 86
 
Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 87
 
Staggered Quantum-well InGaN Laser Characteristics 87
 
Non-polar Plane Quantum-well InGaN LEDs and Lasers 89
 
Semi-polar Plane Quantum-well InGaN LEDs and Lasers 90
 
p-Type Ohmic Contacts and Efficiency of LEDs and Lasers 91
 
Vertical Cavity Surface Emitting Lasers 93
 
Distributed Feedback Lasers 94
 
Plasmonic Nanolasers 94
 
Indium Gallium Nitride LEDs and Lasers on Si Substrates 95
 
6 Inter Sub-band Devices 103
 
Quantum Cascade Lasers 103
 
Infrared Photodetectors 103
 
7 Photodetectors 111
 
Ultraviolet Photodetectors 111
 
Complex Dielectric Function 111
 
Basic Principle of Operation 113
 
Metal-Semiconductor-Metal (MSM) Photodetector 115
 
Solar-blind Group III-Nitride UV Photodetectors 118
 
p-i-n Photodiodes 118
 
Schottky Barrier Photodiodes 123
 
Heterogenous Photodiodes with Group III Nitrides and Transition Metal Dichalcogenides 123
 
Alloy Nitrides and Spectral Response 124
 
Photodetectors and Substrate Engineering 125
 
8 Photovoltaics and Energy Conversion Devices 129
 
Indium Gallium Nitride Material System for Solar Cells 129
 
Basic Solar Cell Physics - p-n Junction Solar Cells 129
 
Intermediate Band Solar Cells 137
 
Substrate Effects on InGaN Solar Cells 139
 
Ohmic Contact Effects in p-n and p-i-n InGaN Solar Cells 140
 
Plasmonically Enhanced Solar Cells 140
 
Solar Concentrating Photovoltaics

Product details

• Authors: Praharaj, C Jayant Praharaj, C. Jayant Praharaj, C. Jayant (Band Photonics Materials Praharaj, Choudhury J Praharaj, Choudhury J. Praharaj
• Publisher: Wiley, John and Sons Ltd
• Languages: English
• Product format: Hardback
• Released: 31.07.2021
• EAN: 9781119708636
• ISBN: 978-1-119-70863-6
• No. of pages: 192
• Subjects: Natural sciences, medicine, IT, technology > Technology > General, dictionaries; Physik, Optoelektronik, Physics, Materialwissenschaften, Materials science, Electronic materials, Electrical & Electronics Engineering, Elektrotechnik u. Elektronik, Elektronische Materialien, Halbleiterphysik, Photonik u. Laser, Photonics & Lasers, Semiconductor Physics