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During the past decade, extensive research has been devoted to the physics of hydrogen in semiconductors. A fundamental understanding of the properties of hydrogen in semiconductors is extremely important from both scientific and engineering points of view. This volume of Semiconductors and Semimetals reviews the latest experimental and theoretical studies on the properties of hydrogen in crystalline and disordered semiconductors. The eleven chapters, written by recognized authorities representing industrial and academic institutions, thoroughly cover the most recent phenomena related to hydrogen in semiconductors.
List of contents
:N. H. Nickel, Introduction to Hydrogen in Semiconductors II. Noble M. Johnson and Chris G. Van de Walle, Isolated Monatomic Hydrogen in Silicon. Yu. V. Gorelkinskii, Electron Paramagnetic Resonance of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon. N. H. Nickel, Hydrogen in Polycrystalline Silicon. W. Beyer, Hydrogen Phenomena in Hydrogenated Amorphous Silicon. Chris G. Van de Walle, Hydrogen Interactions with Polycrystalline and Amorphous Silicon-Theory. K. M. McNamara Rutledge, Hydrogen in Polycrystalline CVD Diamond. R. L. Lichti, Dynamics of Muonium Diffusion, Site Changes and Charge-State Transitions. Matthew D. McCluskey and Eugene E. Haller, Hydrogen in III-V and II-VI Semiconductors. S. J. Pearton and J. W. Lee, The Properties of Hydrogen in GaN and Related Alloys. Jorg Neugebauer and Chris G. Van de Walle, Theory of Hydrogen in Ga N.
About the author
Prof. Dr. Eicke R. Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Summary
Provides detailed coverage of hydrogen in silicon. This work includes a chapter on the neutralization of defects in III*b1V semiconductors.
