Read more
Systematically discusses the growth method, material properties, and applications for key semiconductor materials
MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics.
Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique.
* Covers, in order, the growth method, material properties, and applications for each material
* Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring
* Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires
* Provides topical and wide-ranging coverage from well-known authors in the field
* Part of the Materials for Electronic and Optoelectronic Applications series
Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
List of contents
List of Contributors xv
Foreword xvii
Series Preface xix
Preface xxi
Safety and Environment Disclaimer xxiii
1 Introduction to Metalorganic Vapor Phase Epitaxy 1
S.J.C. Irvine and P. Capper
1.1 Historical Background of MOVPE 1
1.2 Basic Reaction Mechanisms 4
1.3 Precursors 8
1.4 Types of Reactor Cell 9
1.5 Introduction to Applications of MOVPE 11
1.5.1 AlN for UV Emitters 11
1.5.2 GaAs/AlGaAs VCSELS 11
1.5.3 Multijunction Solar Cells 12
1.5.4 GaAs and InP Transistors for High-Frequency Devices 13
1.5.5 Infrared Detectors 14
1.5.6 Photovoltaic and Thermophotovoltaic Devices 14
1.6 Health and Safety Considerations in MOVPE 15
1.7 Conclusions 16
References 16
2 Fundamental Aspects of MOVPE 19
G.B. Stringfellow
2.1 Introduction 19
2.2 Thermodynamics 20
2.2.1 Thermodynamics of MOVPE Growth 20
2.2.2 Solid Composition 24
2.2.3 Phase Separation 29
2.2.4 Ordering 31
2.3 Kinetics 35
2.3.1 Mass Transport 35
2.3.2 Precursor Pyrolysis 36
2.3.3 Control of Solid Composition 37
2.4 Surface Processes 40
2.4.1 Surface Reconstruction 41
2.4.2 Atomic-Level Surface Processes 42
2.4.3 Effects of Surface Processes on Materials Properties 44
2.4.4 Surfactants 46
2.5 Specific Systems 52
2.5.1 AlGaInP 52
2.5.2 Group III Nitrides 53
2.5.3 Novel Alloys 56
2.6 Summary 59
References 60
3 Column III: Phosphides, Arsenides, and Antimonides 71
H. Hardtdegen and M. Mikulics
3.1 Introduction 71
3.2 Precursors for Column III Phosphides, Arsenides, and Antimonides 73
3.3 GaAs-Based Materials 74
3.3.1 (AlGa)As/GaAs Properties and Deposition 74
3.3.2 GaInP, (AlGa)InP/GaAs Properties and Deposition 79
3.4 InP-Based Materials 82
3.4.1 InP Properties and Deposition 82
3.4.2 AlInAs/GaInAs/AlGaInAs Properties and Deposition 83
3.4.3 AlInAs/GaInAs/InP Heterostructures 84
3.4.4 InxGa1-xAsyP1-y Properties and Deposition 84
3.5 Column III Antimonides Properties and Deposition 86
3.5.1 Deposition of InSb, GaSb, and AlSb 87
3.5.2 Deposition of Ternary Column III Alloys (AlGa)Sb and (GaIn)Sb 89
3.5.3 Deposition of Ternary Column V Alloys In(AsSb), GaAsSb 89
3.5.4 Deposition of Quaternary Alloys 90
3.5.5 Epitaxy of Electronic Device Structures 90
3.5.6 Epitaxy of Optoelectronic Device Structures 95
3.6 In Situ Optical Characterization/Growth Control 100
3.7 Conclusions 100
References 101
4 Nitride Semiconductors 109
A. Dadgar and M. Weyers
4.1 Introduction 109
4.2 Properties of III-Nitrides 110
4.3 Challenges in the Growth of III-Nitrides 111
4.3.1 Lattice and Thermal Mismatch 111
4.3.2 Ternary Alloys: Miscibility and Compositional Homogeneity 113
4.3.3 Gas-Phase Prereactions 115
4.3.4 Doping of III-Nitrides 117
4.4 Substrates 120
4.4.1 Heteroepitaxy on Foreign Substrates 122
4.4.2 GaN Growth on Sapphire 125
4.4.3 III-N Growth on SiC 126
4.4.4 GaN Growth on Silicon 127
4.5 MOVPE Growth Technology 130
4.5.1 Precursors 130
4.5.2 Reactors and In Situ Monitoring 130
4.6 Economic Importance 136
4.6.1 Optoelectronic Devices 137
4.6.2 Elect
About the author
Series Editors Arthur Willoughby University of Southampton, Southampton, UK
Peter Capper Ex???Leonardo MW Ltd, Southampton, UK
Safa Kasap University of Saskatchewan, Saskatoon, Canada
Edited by Stuart Irvine, PhD, DSc
College of Engineering, Swansea University, UK Peter Capper, PhD
Ex-Leonardo MW Ltd, Southampton, UK
