Fr. 286.00

Advances in Non-Volatile Memory and Storage Technology

English · Paperback / Softback

Shipping usually within 1 to 3 weeks (not available at short notice)

Description

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Informationen zum Autor Professor Yoshio Nishi is a Professor in the Department of Electrical Engineering and by courtesy in the Department of Material Science and Engineering. He was Director of the Stanford Nanofabrication Facility of National Nanotechnology Infrastructure Network and is now Director of Research of Stanford Center for Integrated Systems at Stanford University, USA Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles

List of contents

Part 1: Progress in nonvolatile memory research and application
1. OxRAM technology development and performances
2. Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications
3. Advanced modeling and characterization techniques for innovative memory devices: The RRAM case
4. Mechanism of memristive switching in OxRAM
5. Interface effects on memristive devices
6. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)
7. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology
8. 3D-NAND Flash memory and technology
9. Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems
10. Selector devices for x-point memory
Part 2: Emerging opportunities
11. Ferroelectric memories
12. Advances in nanowire PCM
13. Flexible and transparent ReRAM devices for system on panel (SOP) application
14. RRAM/memristor for computing
15. Emerging memory technologies for neuromorphic hardware
16. Neuromorphic computing with resistive switching memory devices

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