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Informationen zum Autor Series Editors Arthur Willoughby University of Southampton, Southampton, UK Peter Capper formerly of SELEX Galileo Infrared Ltd, Southampton, UK Safa Kasap University of Saskatchewan, Saskatoon, Canada Edited by Hajime Asahi Emeritus Professor, Osaka University, Japan Yoshiji Horikoshi Emeritus Professor, Waseda University, Tokyo, Japan Klappentext Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III-V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth. Inhaltsverzeichnis List of Contributors xv Series Preface xix Preface xxi Part I Fundamentals of MBE 1 1. History of MBE 3 Tom Foxon 1.1 Introduction 3 1.2 The MBE Process 4 1.3 Controlled n and p Doping 10 1.4 Modified Growth Procedures 10 1.5 Gas-Source MBE 11 1.6 Low-Dimensional Structures 11 1.7 III-V Nitrides, Phosphides, Antimonides and Bismides and Other Materials 13 1.8 Early MBE-Grown Devices 18 1.9 Summary 18 Acknowledgments 18 References 19 2. General Description of MBE 23 Yoshiji Horikoshi 2.1 Introduction 23 2.2 High-Vacuum Chamber System 24 2.3 Atomic and Molecular Beam Sources 25 2.4 Measurement of MBE Growth Parameters 28 2.5 Surface Characterization Tools for MBE Growth 31 2.6 Summary 37 Acknowledgments 37 References 38 3. Migration-Enhanced Epitaxy and its Application 41 Yoshiji Horikoshi 3.1 Introduction 41 3.2 Toward Atomically Flat Surfaces in MBE 42 3.3 Principle of MEE 44 3.4 Growth of GaAs by MEE 48 3.5 Incommensurate Deposition and Migration of Ga Atoms 49 <...
