Nitride Semiconductor Doped with Transition Metal

In this work, we present a theoretical study of structural, electronic, magnetic and optical properties for zinc-blende :Ga1-xT MxN,Al1-xT MxN and In1-xT MxN(TM=Cr, Fe, Mn, V) using the full-potential augmented plane wave (FP-APW) method with local spin density approximation (LSDA). We have analysed the dependence of structural parameters values on the composition x in the range of x=0.125,x=0.25, x=0.50,x=0.75, we found existence of deviation from Vegard's law. Our calculations also verify the half-metallic ferromagnetic character of TM doped GaN, AlN and InN. Also, the role of p-d hybridization is analyzed by partial (PDOS) and total density of stat (TDOS).

About the author

Dr Fethallah DAHMANE is a Professor of Physics in university of Tissemsilt. He Received PhD from Sidi Bel Abbes University in 2014. His main scientific work is focused on the structural, electronic and, magnetic properties of crystalline materials using Density functional theory (DFT) as implemented in WIEN2K packages.

Product details

• Authors: Fethalla Dahmane, Fethallah Dahmane, Bendo Doumi, Bendouma Doumi, Abdelkade Tadjer, Abdelkader Tadjer
• Publisher: LAP Lambert Academic Publishing
• Languages: English, German
• Product format: Paperback / Softback
• Released: 27.08.2018
• EAN: 9783659511189
• ISBN: 978-3-659-51118-9
• No. of pages: 156
• Dimensions: 150 mm x 220 mm x 9 mm
• Weight: 251 g
• Subject: Natural sciences, medicine, IT, technology > Physics, astronomy > Electricity, magnetism, optics