Fr. 70.00

Field-effect Self-mixing Terahertz Detectors

English · Paperback / Softback

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Description

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A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.

List of contents

Introduction.- Field-Effect Self-Mixing Mechanism and Detector Model.- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT.- Realization of Resonant Plasmon Excitation and Detection.- Scanning Near-Field Probe for Antenna Characterization.- Applications.- Conclusions and Outlook.

Summary

A comprehensive device model considering both spatial
distributions of the terahertz field and the field-effect self-mixing factor
has been constructed for the first time in the thesis. The author has found
that it is the strongly localized terahertz field induced in a small fraction
of the gated electron channel that plays an important role in the high
responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a
2-micron-sized gate and integrated dipole antennas has been developed and can
offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further
reducing the gate length down to 0.2 micron, a noise-equivalent power of 6
pW/Hz1/2 has been achieved. This thesis provides detailed experimental
techniques anddevice simulation for revealing the self-mixing mechanism
including a scanning probe technique for evaluating the effectiveness of
terahertz antennas. As such, the thesis could be served as a valuable
introduction towards further development of high-sensitivity field-effect terahertz
detectors for practical applications.

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