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Jüngste Fortschritte der Informationstechnologie führten zur Entwicklung ultraschneller Bauelemente, die sich zur Erzielung hoher Leistungsfähigkeit bei minimalem Rauschen eignen. Dieses aktuelle Gebiet der Halbleitertechnologie wird hier Band speziell für Ingenieure abgehandelt. Diskutiert werden vor allem optimale Lösungen für Halbleiter und Halbleiterstrukturen.
List of contents
Preface.
List of Symbols.
Introduction.
Kinetic Theory of Nonequilibrium Processes.
Fluctuations: Kinetic Theory.
Effect of Interelectron Collisions on Fluctuation Phenomena.
Boltzmann-Langevin Equation.
Fluctuations and Diffusion.
Features of Hot-Electron Fluctuation Spectra.
Experimental Techniques.
Hot-Electron Microwave Noise in Elementary Semiconductors.
Hot-Electron Microwave Noise in GaAs and InP.
Length-Dependent Hot-Electron Noise.
Hot-Electron Noise in Doped Semiconductors: Theory.
Electronic Noise in Standard-Doped n-Type GaAs.
Electron Diffusion in Standard-Doped n-Type GaAs.
Electronic Subbands in Quantum Wells.
Hot-Electron Noise in ALGaAs/GaAs 2DEG Channels.
Hot-Electron Noise in InP-Based 2DEG Channels.
Cutoff Frequencies of Fast and Ultrafast Processes.
Spatially Inhomogeneous Fluctuations.
Monte Carlo Approach to Microwave Noise in Devices.
Bibliography.
Index.
About the author
HANS LUDWIG HARTNAGEL is Professor at Darmstadt University of Technology in Darmstadt, Germany.
RAMUNAS KATILIUS, PhD, is Professor and principal research associate of the Fluctuation Research Laboratory at the Semiconductor Physics Institute in Vilnius, Lithuania.
ARVYDAS MATULIONIS, PhD, is Professor and Head of the Fluctuation Research Laboratory at the Semiconductor Physics Institute in Vilnius, Lithuania.
