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Intergrowth bismuth layered structure ferroelectrics (BLSFs) in the system SrO-Bi2O3-TiO2 have been investigated with an objective to improve the dielectric and ferroelectric properties of them. There are three BLSFs in this system namely Bi4Ti3O12 (BIT), SrBi4Ti4O15 (SBTi4) and Sr2Bi4Ti5O18 (SBTi5) and one stable intergrowth BLSF compound between BIT-SBTi4. All these BLSFs compounds have been synthesized through a modified oxalate route. Their phase formation behavior during synthesis has been investigated in details using TG/DSC and XRD analysis. The crystal structures of all the compounds were refined through Rietveld analysis to find accurate lattice parameters. Densification characteristics, microstructure development, dielectric and ferroelectric properties of all compounds were analysed. Some findings were: i.BIT-SBTi4 intergrowth compound showed an enhanced 2Pr than their individual constituent BIT and SBTi4. A short range intergrowth structure between SBTi4-SBTi5 could be possible, which showed a broaden permittivity temperature characteristics. ii.The remnant polarization of BIT-SBTi4 intergrowth has been enhanced with substitutions and addition of Nb,La and CuO.
About the author
Dr. Geetanjali Parida has been awarded PhD degree in November 2015 from "The Department of Ceramic Engineering¿, from National Institute of Technology Rourkela. She belongs to a city called Rourkela in Odisha, India. She owns the experience in the field of Surface coating for mechanical properties and Ferroelectric materials for NVRAM application.
