Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Informationen zum Autor Yue Hao , Jin Feng Zhang , and Jin Cheng Zha ng are affiliated with Xidian University, China. Klappentext This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Zusammenfassung This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). Inhaltsverzeichnis Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Product details

• Authors: Yue Hao, Yue (Xidian University Hao, Yue Zhang Hao, Hao Yue, Jin Cheng Zhang, Jin Cheng (Xidian University Zhang, Jin Feng Zhang, Jin Feng (Xidian University Zhang, Zhang Jin Cheng, Zhang Jin Feng
• Publisher: Taylor & Francis Ltd.
• Languages: English
• Product format: Hardback
• Released: 03.10.2016
• EAN: 9781498745123
• ISBN: 978-1-4987-4512-3
• No. of pages: 392
• Subjects: Guides; Natural sciences, medicine, IT, technology > Physics, astronomy > General, dictionaries; Electronic devices and materials, Semi-conductors & super-conductors