Tunneling Field Effect Transistor Technology

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

List of contents

SteepSlope Devices and TFETs.- Tunnel-FETFabrication and Characterization.- Compact Models of TFETs.- Challenges and Designs of TFET for DigitalApplications.- Atomistic Simulations of Tunneling FETs.- Quantum TransportSimulation of III-V TFETs with Reduced-Order k ·p Method.- Carbon Nanotube TFETs: StructureOptimization with Numerical Simulation.

Summary

This book provides a single-source reference to the state-of-the art in
tunneling field effect transistors (TFETs).  Readers will learn the TFETs
physics from advanced atomistic simulations, the TFETs fabrication process and
the important roles that TFETs will play in enabling integrated circuit designs
for power efficiency.

Product details

• Assisted by: Chan (Editor), Chan (Editor), Mansun Chan (Editor), Linin Zhang (Editor), Lining Zhang (Editor)
• Publisher: Springer, Berlin
• Languages: English
• Product format: Hardback
• Released: 01.01.2016
• EAN: 9783319316512
• ISBN: 978-3-31-931651-2
• No. of pages: 213
• Dimensions: 162 mm x 244 mm x 15 mm
• Weight: 489 g
• Illustrations: IX, 213 p. 147 illus., 122 illus. in color.
• Subjects: Natural sciences, medicine, IT, technology > Technology > Electronics, electrical engineering, communications engineering; B, engineering, Circuits and Systems, Electronic Circuits and Devices, Electronic devices & materials, Electronics, Microelectronics, Electronics and Microelectronics, Instrumentation, Electronics engineering, Electronic circuits, Electronic Circuits and Systems, Electronics: circuits & components