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In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10 .cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode.
About the author
Muna S. Mohammed Jawad: born in Baghdad in 1980, received B.Sc. and M.Sc. degree in Laser physics From Applied Science, University of Technology, Baghdad, Iraq in 2002 and 2013. And now Assist Lect. Employed in University of Technology.
