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Electronic systems and digital computers are an indispensable element of modern multimedia technologies and the Internet society. But their explosive advance would not have been possible without the extraordinary progress in VLSI technology using high-quality SiO2. This volume addresses the thin gate oxides involved in the individual processes in fabrication, e.g. the growth, cleaning and thermal oxidation of silicon, metal interconnect formation, and photolithography. It describes new methods for observing defects in SiO2 as well as novel approaches to eliminating such defects. The book will be a valuable resource for all materials scientists and engineers seeking to further advance the quality of silicon microdevices.
List of contents
From the contents:
- 1. Introduction
- 2. Outline of Silicon Processes
- 3. Basic Characteristics of SiO2
- 4. Oxide Defect Locating Method
- 5. Correlation between p-Si and n-Si Minority-Carrier Recom- bination Lifetimes
- 6. Wafer Transient Deformation Obsera- tion
- 7. SiO2 Weak Spots Originating in Si Wafers
- 8. Wa- fer Cleaning Process Affecting SiO2 Dielectric Strength
- 9. Selective Oxidation Process Inducing SiO2 Weak-Spots
- 10. Thermal Oxidation Causing SiO2 Instability
- 11. Polysilicon Gate Formation Process Affecting SiO2 Quality
- 12. Metal Interconnect Formation Process Causing SiO2 Deterioration
- 13. Si-SiO2 Weak-Spots System Repaired from Plasma Damage Through Water Pouring
- 14. Local Weak-Spots Found in Poly- Oxides and Buried Oxides
- 15. Oxides Reliability
