Cmos Gate Stack Scaling Materials, Interfaces and Reliability - Implications: Volume 115

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

Product details

• Authors: Alexander A. Demkov, Alexander A. (Freescale Semiconductor Inc. Demkov, Alexander A. (University of Texas Demkov
• Assisted by: Butterbaugh Jeffery W. (Editor), Alexander A. Demkov (Editor), Demkov Alexander A. (Editor), H. Rusty Harris (Editor), Harris H. Rusty (Editor), Rachmady Willy (Editor), Bill Taylor (Editor), Taylor Bill (Editor)
• Publisher: Cambridge University Press ELT
• Languages: English
• Product format: Paperback / Softback
• Released: 05.06.2014
• EAN: 9781107408326
• ISBN: 978-1-107-40832-6
• No. of pages: 194
• Series: MRS Proceedings; MRS Proceedings
• Subjects: Natural sciences, medicine, IT, technology > Technology > Miscellaneous; TECHNOLOGY & ENGINEERING / Quality Control, TECHNOLOGY & ENGINEERING / Industrial Engineering, Materials science, Reliability engineering, TECHNOLOGY & ENGINEERING / Materials Science / General