Materials and Physics for Nonvolatile Memories: Volume 1160

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

List of contents

Part I. Advanced Flash I; Part II. Charge Trap Memory I; Part III. Magnetic Resistive RAM; Part IV. Poster Session: Advanced Flash II; Part V. Poster Session: Charge Trap II and MRAM; Part VI. Ferroelectric Memory; Part VII. Resistive Switching RAM I; Part VIII. Resistive Switching RAM II; Part IX. Poster Session: Resistive Switching RAM III; Part X. Poster Session: Phase Change RAM I; Part XI. Phase Change RAM II; Part XII. Phase Change RAM III; Author index; Subject index.

Product details

• Authors: Yoshihisa Fujisaki, Yoshihisa Waser Fujisaki
• Assisted by: Bonafos Caroline (Editor), Yoshihisa Fujisaki (Editor), Fujisaki Yoshihisa (Editor), Tingkai Li (Editor), Li Tingkai (Editor), Rainer Waser (Editor), Waser Rainer (Editor)
• Publisher: Cambridge University Press ELT
• Languages: English
• Product format: Paperback / Softback
• Released: 05.06.2014
• EAN: 9781107408296
• ISBN: 978-1-107-40829-6
• No. of pages: 216
• Series: MRS Proceedings; MRS Proceedings
• Subjects: Natural sciences, medicine, IT, technology > Technology > Miscellaneous; Materials science, TECHNOLOGY & ENGINEERING / Materials Science / General